Benjamin Maerz

Ternary nitrides are rapidly emerging as promising compounds for optoelectronic and energy conversion applications, yet comparatively little of this vast composition space has been explored. Furthermore, the crystal structures of these compounds can exhibit a significant amount of disorder, the consequences of which are not yet well understood. Here, the deposition of bixbyite‐type ZrTaN₃ thin films is demonstrated by reactive magnetron co‐sputtering and observed semiconducting character, with a strong optical absorption onset at 1.8 eV and significant photoactivity, with prospective application as functional photoanodes. It is found that Wyckoff‐site occupancy of cations is a critical factor in determining these beneficial optoelectronic properties. First‐principles calculations show that cation disorder leads to minor deviations in the total energy but modulates the bandgap by 0.5 eV, changing orbital hybridization of valence and conduction band states. In addition to demonstrating that ZrTaN₃ is a promising visible light‐absorbing semiconductor and active photoanode material, the findings provide important insights regarding the role of cation ordering on the electronic structure of ternary semiconductors. In particular, it is shown that not only cation order, but also the cationic Wyckoff site occupancy has a substantial impact on key optoelectronic properties, which can guide future design and synthesis of advanced semiconductors.

Colloidal lead halide perovskite nanocrystals have potential for lighting applications due to their optical properties. Precise control of the nanocrystal dimensions and composition is a prerequisite for establishing practical applications. However, the rapid nature of their synthesis precludes a detailed understanding of the synthetic pathways, thereby limiting the optimisation. Here, we deduce the formation mechanisms of anisotropic lead halide perovskite nanocrystals, 1D nanorods and 2D nanoplatelets, by combining in situ X-ray scattering and photoluminescence spectroscopy. In both cases, emissive prolate nanoclusters form when the two precursor solutions are mixed. The ensuing antisolvent addition induces the divergent anisotropy: The intermediate nanoclusters are driven into a dense hexagonal mesophase, fusing to form nanorods. Contrastingly, nanoplatelets grow freely dispersed from dissolving nanoclusters, stacking subsequently in lamellar superstructures. Shape and size control of the nanocrystals are determined primarily by the antisolvent’s dipole moment and Hansen hydrogen bonding parameter. Exploiting the interplay of antisolvent and organic ligands could enable more complex nanocrystal geometries in the future.

We report the precise measurement of electric fields in nanostructures, and high-contrast imaging of soft matter at ultralow electron doses by transmission electron microscopy (TEM). In particular, a versatile method based on the theorem of reciprocity is introduced to enable differential phase contrast imaging and ptychography in conventional, plane-wave illumination TEM. This is realised by a series of TEM images acquired under different tilts, thereby introducing the sampling rate in reciprocal space as a tuneable parameter, in contrast to momentum-resolved scanning techniques. First, the electric field of a p–n junction in GaAs is imaged. Second, low-dose, in-focus ptychographic and DPC characterisation of Kagome pores in weakly scattering covalent organic frameworks is demonstrated by using a precessing electron beam in combination with a direct electron detector. The approach offers utmost flexibility to record relevant spatial frequencies selectively, while acquisition times and dose requirements are significantly reduced compared to the 4D-STEM counterpart.

When using the unit cell average of first moment data from four-dimensional scanning transmission electron microscopy (4D-STEM) to characterize ferroelectric materials, a variety of sources of systematic errors needs to be taken into account. In particular, these are the magnitude of the acceleration voltage, STEM probe semi-convergence angle, sample thickness, and sample tilt out of zone axis. Simulations show that a systematic error of calculated electric fields using the unit cell averaged momentum transfer originates from violation of point symmetry within the unit cells. Thus, values can easily exceed those of potential polarization-induced electric fields in ferroelectrics. Importantly, this systematic error produces deflection gradients between different domains seemingly representing measured fields. However, it could be shown that for PbZr0.2Ti0.8O3, many adjacent domains exhibit a relative crystallographic mistilt and in-plane rotation. The experimental results show that the method gives qualitative domain contrast. Comparison of the calculated electric field with the systematic error showed that the domain contrast of the unit cell averaged electric fields is mainly caused by dynamical scattering effects and the electric field plays only a minor role, if present at all.

This work demonstrates a large area process for atomically thin 2D semiconductors to unlock the technological upscale required for their commercial uptake. The new atomic layer deposition (ALD) and conversion technique yields large area performance uniformity and tunability. Like graphene, 2D Transition Metal Dichalcogenides (TMDCs) are prone to upscaling challenges limiting their commercial uptake. They are challenging to grow uniformly on large substrates and to transfer on alternative substrates while they often lack in large area electrical performance uniformity. The scalable ALD process of this work enables uniform growth of 2D TMDCs on large area with independent control of layer thickness, stoichiometry and crystallinity while allowing chemical free transfers to application substrates. Field effect transistors (FETs) fabricated on flexible substrates using the process present a field effect mobility of up to 55 cm²/Vs, subthreshold slope down to 80 mV/dec and on/off ratios of 10⁷. In addition, non-volatile memory transistors using ferroelectric FETs (FeFETs) operating at ±5 V with on/off ratio of 10⁷ and a memory window of 3.25 V are demonstrated. These FeFETs demonstrate state-of-the-art performance with multiple state switching, suitable for one-transistor non-volatile memory and for synaptic transistors revealing the applicability of the process to flexible neuromorphic applications.

The influence of self-assembled short-period superlattices (SPSLs) on the structural and optical properties of InGaN/GaN nanowires (NWs) grown by PAMBE on Si (111) was investigated by STEM, EDXS, µ-PL analysis and k·p simulations. STEM analysis on single NWs indicates that in most of the studied nanostructures, SPSLs self-assemble during growth. The SPSLs display short-range ordering of In-rich and In-poor In_xGa_1-xN regions with a period of 2–3 nm that are covered by a GaN shell and that transition to a more homogenous In_xGa_1-xN core. Polarization- and temperature-resolved PL analysis performed on the same NWs shows that they exhibit a strong parallel polarized red-yellow emission and a predominantly perpendicular polarized blue emission, which are ascribed to different In-rich regions in the nanostructures. The correlation between STEM, µ-PL and k·p simulations provides better understanding of the rich optical emission of complex III-N nanostructures and how they are impacted by structural properties, yielding the significant impact of strain on self-assembly and spectral emission.

Graphical abstract

A pronounced polarization anisotropy and spectral red-shift of the emission wavelength of individual InGaN nanowires is attributed to the spontaneous formation of superlattices caused by inhomogeneous In-distribution in the wires.

A pronounced polarization anisotropy and spectral red-shift of the emission wavelength of individual InGaN nanowires is attributed to the spontaneous formation of superlattices caused by inhomogeneous In-distribution in the wires.

A reformulated implementation of single-sideband ptychography enables analysis and display of live detector data streams in 4D scanning transmission electron microscopy (STEM) using the LiberTEM open-source platform. This is combined with live first moment and further virtual STEM detector analysis. Processing of both real experimental and simulated data shows the characteristics of this method when data are processed progressively, as opposed to the usual offline processing of a complete data set. In particular, the single-sideband method is compared with other techniques such as the enhanced ptychographic engine in order to ascertain its capability for structural imaging at increased specimen thickness. Qualitatively interpretable live results are obtained also if the sample is moved, or magnification is changed during the analysis. This allows live optimization of instrument as well as specimen parameters during the analysis. The methodology is especially expected to improve contrast- and dose-efficient in situ imaging of weakly scattering specimens, where fast live feedback during the experiment is required.

The AlON transparent ceramic cantilever beams containing twin and grain boundaries were fabricated by focused ion beam technique. The deformation behaviors were investigated by measurement of the load and displacement dependence of cantilever beams from micro bending tests. Young's modulus of AlON transparent ceramics was calculated from load and displacement curves, the results of which were consistent with results of previous works. Moreover, the bonding strengths of twin lamella boundary, twin boundary, and normal grain boundary in AlON transparent ceramics were 5.00, 5.05, and 4.81 GPa, respectively.

The AlON transparent ceramic cantilever beams containing twin and grain boundaries were fabricated by focused ion beam technique. The deformation behaviors were investigated by measurement of the load and displacement dependence of cantilever beams from micro bending tests. Young's modulus of AlON transparent ceramics was calculated from load and displacement curves, the results of which were consistent with results of previous works. Moreover, the bonding strengths of twin lamella boundary, twin boundary, and normal grain boundary in AlON transparent ceramics were 5.00, 5.05, and 4.81 GPa, respectively.