Zhihan Hu

We propose a method to convert the channeling Rutherford backscattering spectrum yield map of a single crystal to a polycrystal through a matrix rotation technique. The rotation matrix is determined by the deviation of the crystal axial direction from the original z axis. The final yield map is created after averaging the rotated yields using the texture function as the weight factor. For highly oriented pyrolytic graphite (HOPG) exhibiting mosaic spread, the method leads to a Gaussian kernel averaging of the map obtained from a single crystal. The yield map of a single crystal is obtained by a simulation of ion trajectories in a potential field described by Moliere screened Coulomb potentials. Yield maps are calculated under variousσ values (standard deviations of mosaic spread). The simulated results are compared with experimental results obtained using 1.2 MeV alpha particle. σ is extracted through the best fitting, demonstrating that the method can be used to obtain texture details. The effects of mosaic spread on minimum yield χmin and the half-width at half maximum of angular scans ψ1/2 are systematically modeled and compared with previous theoretical equations. The study also shows that previous theoretical equations are valid only at small σ values. The proposed method can be applied to any type of polycrystal and is not limited to HOPG. It provides near-surface mosaic spread and crystallography information with a longitudinal depth resolution of tens of nanometers and is not influenced by grain shapes.

Polycrystalline γ-LiAlO2 pellets were sequentially irradiated with 120 keV He+ and 80 keV D2+ ions to the fluences of 1 × 1017 and 2 × 1017 (He+ + D+)/cm2 at 573 K. Additional irradiation was performed to a fluence of 2 × 1017 (He+ + D+)/cm2 at 773 K. The irradiated pellets were characterized using scanning transmission electron microscopy, time-of-flight secondary ion mass spectrometry, and grazing incidence x-ray diffraction. Lattice damage, amorphization, and fractures are observed with no evidence for the formation of secondary-phase precipitates in the pellets irradiated up to an ion fluence of 2 × 1017 (He+ + D+)/cm2 at 573 K. In contrast, faceted precipitates with sizes larger than 100 nm formed in a pellet irradiated to 2 × 1017 (He+ + D+)/cm2 at 773 K. Analyses of the diffraction and composition data suggest that the precipitates have a spinel-type structure, likely a non-stoichiometric LiAl5O8 with Li depletion. This could be an intermediate phase with Li atoms at the octahedral and possibly tetrahedral sites as well. It is speculated that as the dose increases, Li loss will continue and the precipitates will approach a composition of alumina primarily in phases of α-Al2O3 and amorphized Al2O3.

The effect of stress on irradiation responses of highly oriented pyrolytic graphite (HOPG) was studied by combing molecular dynamics (MD) simulation, proton irradiation, and Raman characterization. MD simulations of carbon knock-on at energies < 60 eV were used to obtain average threshold displacement energies (E¯d) as a function of strain ranging from 0 to 10%. Simulations at a higher irradiation energy of 2–5 keV were used to study the effect of strain on damage cascade evolution. With increasing tensile strain, E¯d was reduced from 35 eV at 0% strain to 31 eV at 10% strain. The strain-reduced E¯d led to a higher damage peak and more surviving defects (up to 1 ps). Furthermore, high strains induced local cleavage around the cavities, as one additional mechanism of damage enhancement. Experimentally, HOPG film was folded, and the folded region with the maximum tensile stress was irradiated by a 2 MeV proton beam. Raman characterization showed significantly enhanced D to G modes in comparison to the stress-free irradiation. Based on the strain dependence of E¯d and the Kinchin–Pease model, a formula for displacement estimation under different tensile strains is proposed. The stress effects need to be considered in graphite applications in a reactor’s harsh environment where both neutron damage and stress are present.