Biswajit Ray
- Name
- Dr. Biswajit Ray
- Institution
- University of Alabama
- Position
- Assistant Professor
- Affiliation
- University of Alabama in Huntsville
- h-Index
- 14
- ORCID
- 0000-0002-5890-1368
- Biography
Biswajit Ray is an Assistant Professor of Electrical and Computer Engineering with the University of Alabama in Huntsville, AL, USA, where he leads the Hardware Reliability Lab. Dr. Ray received Ph.D. from Purdue University, West Lafayette, IN in 2013 and then he worked in SanDisk Corporation, California, USA, developing 3D NAND flash memory technology. His current research spans the boundaries of electron devices and systems for addressing the challenges in hardware security and reliability. Dr. Ray has 10 U.S. issued patents on non-volatile memory systems, published more than 40 research papers in international journals and conferences. He is a permanent resident of USA.
| "Gamma Ray Induced Error Pattern Analysis for MLC 3-D NAND Flash Memories" Biswajit Ray, IEEE Transactions on Nuclear Science Vol. 2021 Link | ||
| "Layer Dependent Bit Error Variation in 3-D NAND Flash Under Ionizing Radiation" Biswajit Ray, IEEE Transactions on Nuclear Science Vol. 67 2020 2021-2027 Link | ||
| "Radiation Induced Error Mitigation by Read-Retry Technique for MLC 3-D NAND Flash Memory" Biswajit Ray, IEEE Transactions on Nuclear Science Vol. 2021 Link | ||
|
"Radiation Tolerance of 3-D NAND Flash Based Neuromorphic Computing System"
Biswajit Ray,
Proc. of the 2020 IEEE International Reliability Physics Symposium, Monterey, CA
Vol.
2020
Link
In this paper we show the effectiveness of a multi-level-cell 3-D NAND flash chip as a weight storage device for a neuromorphic computing system under radiation environment. We find that the error-correction codes can be avoided for storing model weights in 3-D NAND for enabling low-power computing applications without sacrificing much accuracy (radiation dose <10k rad). Additionally, radiation induced BER data shows layer-to-layer variations, which can be utilized in favor of improving neural network’s accuracy. |
| "Word Line Dependent Bit Error in 3-D NAND Flash Under Ionizing Radiation" Biswajit Ray, IEEE Nuclear and Space Radiation Effects Conference July 2-3, (2019) |
| RTE 2nd Call Awards Announced - Projects total approximately $1.6 million These project awards went to principal investigators from 26 U.S. universities, eight national laboratories, two British universities, and one Canadian laboratory. Tuesday, May 14, 2019 - Calls and Awards |
| DOE Awards 37 RTE Proposals - Awarded projects total nearly $1.4M in access awards Tuesday, July 14, 2020 - News Release, Calls and Awards |
| NSUF awards 30 Rapid Turnaround Experiment proposals - Approximately $1.53M has been awarded. Tuesday, June 14, 2022 - Calls and Awards |
| NSUF awards 22 Rapid Turnaround Experiment proposals - Thursday, September 14, 2023 - Calls and Awards |
Characterization of the Total-Dose Effect on State-of-the-Art Static Random-Access Memory - FY 2023 RTE 3rd Call, #4754
In-situ investigation of irradiation damage on non-volatile memory - FY 2019 RTE 2nd Call, #1750
Investigation of Total Dose Effects on Data Corruption Rates in High Density 3-D Non-volatile Memory - FY 2020 RTE 2nd Call, #4173
Radiation Tolerant Neuromorphic Computing System using 3-D NAND Flash Memory - FY 2022 RTE 1st Call, #4462
About Us
The Nuclear Science User Facilities (NSUF) is the U.S. Department of Energy Office of Nuclear Energy's only designated nuclear energy user facility. Through peer-reviewed proposal processes, the NSUF provides researchers access to neutron, ion, and gamma irradiations, post-irradiation examination and beamline capabilities at Idaho National Laboratory and a diverse mix of university, national laboratory and industry partner institutions.
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