Leonard Brillson

Profile Information
Name
Professor Leonard Brillson
Institution
Ohio State University
Position
Full Professor
Affiliation
Fellow, APS, MRS, AVS, IEEE, AAAS
h-Index
52
ORCID
0000-0003-3527-9761
Biography


Len Brillson holds a joint appointment between the Department of Electrical & Computer Engineering, the Department of Physics, and the Center for Materials Research leading an interdisciplinary research effort in Electronic Materials. Before joining the faculty at the Ohio State University, he was a director of Xerox Corporation's Materials Research Laboratory and had responsibility for Xerox's long-range physical science and technology programs at the company's research headquarters in Rochester, N.Y. A.B., Princeton University and Ph.D., University of Pennsylvania, both in physics. He is a Fellow of the Institute of Electrical and Electronics Engineers (IEEE), the American Academy for the Advancement of Science (AAAS), the American Physical Society (APS), the AVS Science & Technology Society, the Materials Research Society (MRS) and a former Governing Board member of the American Institute of Physics (AIP). He has served on the editorial boards for numerous technical journals, and has more than 350 professional publications including technical articles, invited reviews, monographs and books as well as over 10,000 citations to his work (h-index = 52), including the ISI Citation Classic, The Structure and Properties of Metal-Semiconductor Interfaces. His research group pursues a broad science and engineering program in the structure and properties of electronic materials surfaces and interfaces at the atomic and nanometer scales, emphasizing wide band gap semiconductors for microelectronics and optoelectronics, semiconductor heterostructures for renewable energy generation, semiconductor transistors for bioelectronics sensors, thin film dielectrics for insulating gate structures, and complex oxides for spintronic, communications, radar, and ultrasensitive antenna applications.  His awards include Xerox Corporation?s Outstanding Achievement Award, Surface Science Magazine?s Excellence Award, Citation Classic recognition by the Institute for Scientific Information, IEEE Columbus? Technical Achievement Award, the 2006 AVS Science and Technology Gaede-Langmuir award, and a 2010 National Science Foundation American Competitiveness and Innovation Fellowship (2010). In 2017, he received the Ohio State University Distinguished Scholar Award. His textbook - Surfaces and Interfaces of Electronic Materials, L.J. Brillson (Wiley-VCH, Weinheim, 2010) is intended for a broad audience of electrical engineering, materials science, and physics students as well as professionals in the field of solid state physics and electronics.  His newest textbook ? An Essential Guide to Electronic Material Surfaces and Interfaces, L.J. Brillson (Wiley, Hoboken, 2016) is an introductory-to-intermediate level textbook suitable for students of physics, electrical engineering, materials science, and other disciplines engaged in surface and interface research, semiconductor processing, or electronic device design.


Expertise
Cathodoluminescence, Solid State Physics, Surface Science
Publications:
"Optical signatures of deep level defects in Ga2O3" Leonard Brillson, Hantian Gao, Muralidharan, Nicholas Pronin, Applied Physics Letters Vol. 112 2018 242102 - 5 Link
We used depth-resolved cathodoluminescence spectroscopy and surface photovoltage spectroscopy to measure the effects of near-surface plasma processing and neutron irradiation on native point defects in b-Ga2O3. The near-surface sensitivity and depth resolution of these optical techniques enabled us to identify spectral changes associated with removing or creating these defects, leading to identification of one oxygen vacancy-related and two gallium vacancy-related energy levels in the beta-Ga2O3 bandgap. The combined near-surface detection and processing of Ga2O3 suggests an avenue for identifying the physical nature and reducing the density of native point defects in this and other semiconductors.
Presentations:
"Native Point Defect Measurement, Processing, and Identification near Ga2O3 Surfaces" Leonard Brillson, 45th Conference on the Physics and Chemistry of Surfaces & Interfaces January 14-18, (2018)
NSUF Articles:
DOE Awards 33 Rapid Turnaround Experiment Research Proposals - Projects total approximately $1.2 million These projects will continue to advance the understanding of irradiation effects in nuclear fuels and materials in support of the mission of the DOE Office of Nuclear Energy. Monday, June 18, 2018 - Calls and Awards
DOE Awards 37 RTE Proposals - Awarded projects total nearly $1.4M in access awards Tuesday, July 14, 2020 - News Release, Calls and Awards